317 citations · 608 across the 10 of their papers we have counts for
10 papers
SOT-MRAM-Enabled Probabilistic Binary Neural Networks for Noise-Tolerant and Fast Training
Puyang Huang, Yu Gu, Chenyi Fu +10
We report the use of spin-orbit torque (SOT) magnetoresistive random-access memory (MRAM) to implement a probabilistic binary neural network (PBNN) for resource-saving applications…
Field-Free Switching of Perpendicular Magnetic Tunnel Junction via Voltage-Gated Spin Hall Effect for Low-Power Spintronic Memory
Shouzhong Peng, Xiang Li, Wang Kang +7
Spin Hall effect (SHE) and voltage-controlled magnetic anisotropy (VCMA) are two promising methods for low-power electrical manipulation of magnetization. Recently, magnetic field-…
Tunneling magnetoresistance enhancement by symmetrization in spin-orbit torque magnetic tunnel junction
Jiaqi Zhou, Weisheng Zhao, Kaihua Cao +3
Heavy metals with strong spin-orbit coupling (SOC) have been employed to generate spin current to control the magnetization dynamics by spin-orbit torque (SOT). Magnetic tunnel jun…
First-principles investigation of magnetocrystalline anisotropy oscillations in CoFeAl/Ta heterostructures
Junfeng Qiao, Shouzhong Peng, Youguang Zhang +2
We report first-principles investigations of magnetocrystalline anisotropy energy (MCAE) oscillations as a function of capping layer thickness in Heusler alloy Co\textsubscript{2}F…
Tuning the Dzyaloshinskii-Moriya Interaction in Pt/Co/MgO heterostructures through MgO thickness
Anni Cao, Xueying Zhang, Bert Koopmans +6
The interfacial Dzyaloshinskii-Moriya interaction (DMI) in the ferromagnetic/heavy metal ultra-thin film structures , has attracted a lot of attention thanks to its capability to s…
Current-induced magnetization switching in atom-thick tungsten engineered perpendicular magnetic tunnel junctions with large tunnel magnetoresistance
Mengxing Wang, Wenlong Cai, Kaihua Cao +11
Perpendicular magnetic tunnel junctions based on MgO/CoFeB structures are of particular interest for magnetic random-access memories because of their excellent thermal stability, s…
Amplicification of Voltage Controlled Magnetic Anisotropy Effect with Negative Capacitance
Lang Zeng, Tianqi Gao, Deming Zhang +6
The high current density required by Magnetic Tunneling Junction (MTJ) switching driven by Spin Transfer Torque (STT) effect leads to large power consumption and severe reliability…
Large influence of capping layers on tunnel magnetoresistance in magnetic tunnel junctions
Jiaqi Zhou, Weisheng Zhao, Yin Wang +8
It has been reported in experiments that capping layers which enhance the perpendicular magnetic anisotropy (PMA) of magnetic tunnel junctions (MTJs) induce great impact on the tun…
Giant interfacial perpendicular magnetic anisotropy in MgO/CoFe/capping layer structures
Shouzhong Peng, Weisheng Zhao, Junfeng Qiao +8
Magnetic tunnel junction (MTJ) based on CoFeB/MgO/CoFeB structures is of great interest due to its application in the spin-transfer-torque magnetic random access memory (STT-MRAM).…
Origin of interfacial perpendicular magnetic anisotropy in MgO/CoFe/metallic capping layer structures
Shouzhong Peng, Mengxing Wang, Hongxin Yang +9
Spin-transfer-torque magnetic random access memory (STT-MRAM) attracts extensive attentions due to its non-volatility, high density and low power consumption. The core device in ST…