2 papers
physics.app-ph2018
Field-Free Switching of Perpendicular Magnetic Tunnel Junction via Voltage-Gated Spin Hall Effect for Low-Power Spintronic Memory
Shouzhong Peng, Xiang Li, Wang Kang +7
Spin Hall effect (SHE) and voltage-controlled magnetic anisotropy (VCMA) are two promising methods for low-power electrical manipulation of magnetization. Recently, magnetic field-…
cond-mat.mes-hall2018
Tunneling magnetoresistance enhancement by symmetrization in spin-orbit torque magnetic tunnel junction
Jiaqi Zhou, Weisheng Zhao, Kaihua Cao +3
Heavy metals with strong spin-orbit coupling (SOC) have been employed to generate spin current to control the magnetization dynamics by spin-orbit torque (SOT). Magnetic tunnel jun…