Degradiation of $\beta$-Ga${}_2$O${}_3$ Schottky barrier diode under swift heavy ion irradiation

Wen-Si Ai, Jie Liu, Qian Feng +8

The electrical characteristics and microstructures of $\beta$-Ga${}_2$O${}_3$ Schottky barrier diode (SBD) devices irradiated with swift heavy ions (2096 MeV Ta ions) have been studied. It…