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cond-mat.mtrl-sci2023
Unveiling microstructural damage for leakage current degradation in SiC Schottky diode after heavy ions irradiation under 200 V
Xiaoyu Yan, Pengfei Zhai, Chen Yang +8
Single-event burnout and single-event leakage current (SELC) in SiC power devices induced by heavy ions severely limit their space application, and the underlying mechanism is stil…
cond-mat.mtrl-sci2021
Degradiation of -GaO Schottky barrier diode under swift heavy ion irradiation
Wen-Si Ai, Jie Liu, Qian Feng +8
The electrical characteristics and microstructures of -GaO Schottky barrier diode (SBD) devices irradiated with swift heavy ions (2096 MeV Ta ions) have been studied. It…