56 citations · 56 across the 7 of their papers we have counts for
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Epitaxial MgSnN2 on 4H-SiC (0001): An Earth-Abundant Nitride for Green Optoelectronics and Photovoltaics
D. Gogova, D. Tran, V. Stanishev +11
Group II-IV nitrides have recently emerged as a novel class of semiconductors composed of earth-abundant elements. Owing to their tunable bandgaps, comparable to those of III-nitri…
Questioning van der Waals Epitaxy of Non-Layered Materials on Mica: The Case of ScN
Susmita Chowdhury, Faezeh Alijan Farzad Lahiji, Mikael Ottoson +6
Growing stress-free epitaxial films by van der Waals epitaxy (vdWE) is of interest for realizing flexible optoelectronics and energy devices from freestanding epilayers. However, v…
Electron-phonon interactions and tensor analysis in topological insulator bismuth telluride using angle resolved polarized Raman spectroscopy
Aditya Singh, Anna Elsukova, Divya Rawat +6
We report on the angle-resolved polarized Raman spectroscopy and estimation of the Raman tensor elements using both classical and quantum treatments to analyse the polarized Raman…
Atomistic mechanism and interface-structure-energetics of van der Waals epitaxy demonstrated by layered alpha-MoO3 growth on mica
Faezeh A. F. Lahiji, Davide G. Sangiovanni, Biplab Paul +5
Unlike conventional epitaxy, van der Waals epitaxy (vdWE) allows nearly stress-free growth of thick films with highly oriented crystals without dislocations even for large film-sub…