activity
20182026
most citedEffect of ion-implantation-induced defects and Mg dopants on thermoelectric properties of ScN

56 citations · 56 across the 7 of their papers we have counts for

collaborators

7 papers

physics.ins-det2026

A single platform with van der Pauw geometry for measurement of Seebeck coefficient, resistivity, and Hall effect of thin films

Niraj Kumar Singh, Martin Falk, Per-Anton Schön Wallander +3

A modular thermoelectric properties measurement setup in van der Pauw configuration was developed for a straightforward and simultaneous measurement of electrical resistivity and S…

cond-mat.mtrl-sci2026

Epitaxial MgSnN2 on 4H-SiC (0001): An Earth-Abundant Nitride for Green Optoelectronics and Photovoltaics

D. Gogova, D. Tran, V. Stanishev +11

Group II-IV nitrides have recently emerged as a novel class of semiconductors composed of earth-abundant elements. Owing to their tunable bandgaps, comparable to those of III-nitri…

cond-mat.mtrl-sci2026

Questioning van der Waals Epitaxy of Non-Layered Materials on Mica: The Case of ScN

Susmita Chowdhury, Faezeh Alijan Farzad Lahiji, Mikael Ottoson +6

Growing stress-free epitaxial films by van der Waals epitaxy (vdWE) is of interest for realizing flexible optoelectronics and energy devices from freestanding epilayers. However, v…

cond-mat.supr-con2025

Robust Superconductivity and High Upper Critical Fields in Epitaxial cubic W2N Thin Films

Aditya Singh, Arnaud le Febvrier, Sanath Kumar Honnali +5

Transition Metal Nitrides are a versatile class of materials, combining chemical robustness, high hardness, and superconducting behaviour with critical temperatures between 2 to 10…

cond-mat.mtrl-sci2025

Electron-phonon interactions and tensor analysis in topological insulator bismuth telluride using angle resolved polarized Raman spectroscopy

Aditya Singh, Anna Elsukova, Divya Rawat +6

We report on the angle-resolved polarized Raman spectroscopy and estimation of the Raman tensor elements using both classical and quantum treatments to analyse the polarized Raman…

cond-mat.mtrl-sci2025

Atomistic mechanism and interface-structure-energetics of van der Waals epitaxy demonstrated by layered alpha-MoO3 growth on mica

Faezeh A. F. Lahiji, Davide G. Sangiovanni, Biplab Paul +5

Unlike conventional epitaxy, van der Waals epitaxy (vdWE) allows nearly stress-free growth of thick films with highly oriented crystals without dislocations even for large film-sub…

physics.app-ph2018★ 56 cited

Effect of ion-implantation-induced defects and Mg dopants on thermoelectric properties of ScN

Nina Tureson, Marc Marteau, Thierry Cabioch +10

For applications in energy harvesting, environmentally friendly cooling, and as power sources in remote or portable applications, it is desired to enhance the efficiency of thermoe…