103 citations · 211 across the 8 of their papers we have counts for
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cond-mat.mtrl-sci2013★ 18 cited
Photo-induced persistent inversion of germanium in a 200-nm-deep surface region
T. Prokscha, K. H. Chow, E. Stilp +6
The controlled manipulation of the charge carrier concentration in nanometer thin layers is the basis of current semiconductor technology and of fundamental importance for device a…
cond-mat.mtrl-sci2013★ 4 cited
Behaviour of a muonic atom as an acceptor centre in diamond
T. N. Mamedov, A. S. Baturin, K. I. Gritsaj +5
Polarized negative muons were used to study the behaviour of the boron acceptor centre in synthetic diamond produced by the chemical vapour deposition (CVD) method. The negative mu…