Effect of high temperature annealing (T > 1650°C) on the morphological and electrical properties of p-type implanted 4H-SiC layers

Monia Spera, Domenico Corso, Salvatore Di Franco +5

This work reports on the effect of high temperature annealing on the electrical properties of p-type implanted 4H-SiC. Ion implantations of Aluminium (Al) at different energies (30…