2 papers
cond-mat.mtrl-sci2021
Ni Schottky barrier on heavily doped phosphorous implanted 4H-SiC
Marilena Vivona, Giuseppe Greco, Monia Spera +4
The electrical behavior of Ni Schottky barrier formed onto heavily doped (ND>1019 cm-3) n-type phosphorous implanted silicon carbide (4H-SiC) was investigated, with a focus on the…
physics.app-ph2020
Effect of high temperature annealing (T > 1650°C) on the morphological and electrical properties of p-type implanted 4H-SiC layers
Monia Spera, Domenico Corso, Salvatore Di Franco +5
This work reports on the effect of high temperature annealing on the electrical properties of p-type implanted 4H-SiC. Ion implantations of Aluminium (Al) at different energies (30…