35 citations · 73 across the 3 of their papers we have counts for
3 papers
Ni Schottky barrier on heavily doped phosphorous implanted 4H-SiC
Marilena Vivona, Giuseppe Greco, Monia Spera +4
The electrical behavior of Ni Schottky barrier formed onto heavily doped (ND>1019 cm-3) n-type phosphorous implanted silicon carbide (4H-SiC) was investigated, with a focus on the…
Effect of high temperature annealing (T > 1650°C) on the morphological and electrical properties of p-type implanted 4H-SiC layers
Monia Spera, Domenico Corso, Salvatore Di Franco +5
This work reports on the effect of high temperature annealing on the electrical properties of p-type implanted 4H-SiC. Ion implantations of Aluminium (Al) at different energies (30…
Ohmic contacts on n-type and p-type cubic silicon carbide (3C-SiC) grown on silicon
Monia Spera, Giuseppe Greco, Raffaella Lo Nigro +5
This paper is a report on Ohmic contacts on n-type and p-type type cubic silicon carbide (3C-SiC) layers grown on silicon substrates. In particular, the morphological, electrical a…