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20132026
most citedSurface and Step Conductivities on Si(111) Surfaces

45 citations · 150 across the 8 of their papers we have counts for

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Showing cond-mat.mes-hallShow all

7 papers · 1 filter

cond-mat.mes-hall2026

A miniature evaporator for in-operando deposition of isolated atoms in a low-temperature scanning tunneling microscope

Jeongmin Oh, Hermann Osterhage, Vasily Cherepanov +5

Depositing dilute atomic ensembles onto cold samples is challenging in low-temperature scanning tunneling microscopes (STM) because radiation shields and restricted internal geomet…

cond-mat.mes-hall2021★ 24 cited

Evidence for local spots of viscous electron flow in graphene at moderate mobility

Sayanti Samaddar, Jeff Strasdas, Kevin Janßen +8

Dominating electron-electron scattering enables viscous electron flow exhibiting hydrodynamic current density patterns such as Poiseuille profiles or vortices. The viscous regime h…

cond-mat.mes-hall2019★ 7 cited

Parasitic conduction channels in topological insulator thin films

Sven Just, Felix Lüpke, Vasily Cherepanov +2

Thin films of topological insulators (TI) usually exhibit multiple parallel conduction channels for the transport of electrical current. Beside the topologically protected surface…

cond-mat.mes-hall2016★ 20 cited

Surface Conductivity of Si(100) and Ge(100) Surfaces Determined from Four-Point Transport Measurements Using an Analytical N-Layer Conductance Model

Sven Just, Helmut Soltner, Stefan Korte +2

An analytical N-layer model for charge transport close to a surface is derived from the solution of Poisson's equation and used to describe distance-dependent electrical four-point…

cond-mat.mes-hall2015★ 45 cited

Surface and Step Conductivities on Si(111) Surfaces

Sven Just, Marcus Blab, Stefan Korte +3

Four-point measurements using a multi-tip scanning tunneling microscope (STM) are carried out in order to determine surface and step conductivities on Si(111) surfaces. In a first…

cond-mat.mes-hall2014★ 19 cited

Preferential antiferromagnetic coupling of vacancies in graphene on SiO_2: Electron spin resonance and scanning tunneling spectroscopy

S. Just, S. Zimmermann, V. Kataev +3

Monolayer graphene grown by chemical vapor deposition and transferred to SiO_2 is used to introduce vacancies by Ar^+ ion bombardment at a kinetic energy of 50 eV. The density of d…

cond-mat.mes-hall2013★ 30 cited

Evidence for topological band inversion of the phase change material Ge2Sb2Te5

Christian Pauly, Marcus Liebmann, Alessandro Giussani +8

We present an angle-resolved photoemission study of a ternary phase change material, namely Ge2Sb2Te5, epitaxially grown on Si(111) in the metastable cubic phase. The observed uppe…