223 citations · 700 across the 37 of their papers we have counts for
6 papers · 1 filter
Exploring binary intermetallics for advanced interconnect applications using ab initio simulations
Kiroubanand Sankaran, Kristof Moors, Jean-Philippe Soulié +2
The challenge of increasing copper (Cu) resistivity with diminishing Cu interconnect dimensions in complementary metal-oxide-semiconductor (CMOS) transistors, along with the impera…
First-principles-based screening method for resistivity scaling of anisotropic metals
Kristof Moors, Kiroubanand Sankaran, Geoffrey Pourtois +1
The resistivity scaling of metals is a crucial limiting factor for further downscaling of interconnects in nanoelectronic devices that affects signal delay, heat production, and en…
Ab initio screening of metallic MAX ceramics for advanced interconnect applications
Kiroubanand Sankaran, Kristof Moors, Zsolt Tőkei +2
The potential of a wide range of layered ternary carbide and nitride MAX phases as conductors in interconnect metal lines in advanced CMOS technology nodes has been evaluated using…
Temperature-Dependent Resistivity of Alternative Metal Thin Films
Marco Siniscalchi, Davide Tierno, Kristof Moors +2
The temperature coefficients of the resistivity (TCR) of Cu, Ru, Co, Ir, and W thin films have been investigated as a function of film thickness below 10 nm. Ru, Co, and Ir show bu…
Finite Size Effects in Highly Scaled Ruthenium Interconnects
Shibesh Dutta, Kristof Moors, Michiel Vandemaele +1
Ru has been considered a candidate to replace Cu-based interconnects in VLSI circuits. Here, a methodology is proposed to predict the resistivity of (Ru) interconnects. First, the…
Thickness dependence of the resistivity of Platinum group metal thin films
Shibesh Dutta, Kiroubanand Sankaran, Kristof Moors +6
We report on the thin film resistivity of several platinum-group metals (Ru, Pd, Ir, Pt). Platinum-group thin films show comparable or lower resistivities than Cu for film thicknes…