Finite Size Effects in Highly Scaled Ruthenium Interconnects

Abstract

Ru has been considered a candidate to replace Cu-based interconnects in VLSI circuits. Here, a methodology is proposed to predict the resistivity of (Ru) interconnects. First, the dependence of the Ru thin film resistivity on the film thickness is modeled by the semiclassical Mayadas-Shatzkes (MS) approach. The fitting parameters thus obtained are then used as input in a modified MS model for nanowires to calculate wire resistivities. Predicted experimental resistivities agreed within about 10%. The results further indicate that grain boundary scattering was the dominant scattering mechanism in scaled Ru interconnects.

arXiv comment4 pages. 2 figures

References in corpus (2)

• Thickness dependence of the resistivity of Platinum group metal thin films
• Resistivity scaling and electron relaxation times in metallic nanowires

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