Charge trap layer enabled positive tunable V${}_{fb}$ in $\beta$-Ga${}_2$O${}_3$ gate stacks for enhancement mode transistors

Dipankar Biswas, Chandan Joishi, Jayeeta Biswas +2

$\beta$-Ga${}_2$O${}_3$ based enhancement mode transistor designs are critical for the realization of low loss, high efficiency next generation power devices with rudimentary driving c…