J. Biswas

most citedNb

_{2}

_{5}

high-k dielectric enabled electric field engineering of

β

-Ga

_{2}

_{3}

metal-insulator-semiconductor (MIS) diode

18 citations · 28 across the 2 of their papers we have counts for

collaborators

2 papers

physics.app-ph2021★ 18 cited

Nb $_{2}$ O $_{5}$ high-k dielectric enabled electric field engineering of $β$ -Ga $_{2}$ O $_{3}$ metal-insulator-semiconductor (MIS) diode

Prabhans Tiwari, Jayeeta Biswas, Chandan Joishi +1

We demonstrate an Nb $_{2}$ O $_{5}$ / $β$ -Ga $_{2}$ O $_{3}$ metal-insulator-semiconductor (MIS) hetero-junction diode with Nb $_{2}$ O $_{5}$ as the high-k dielectric insulator for more eff…

physics.app-ph2020★ 10 cited

Charge trap layer enabled positive tunable V $_{f b}$ in $β$ -Ga $_{2}$ O $_{3}$ gate stacks for enhancement mode transistors

Dipankar Biswas, Chandan Joishi, Jayeeta Biswas +2

$β$ -Ga $_{2}$ O $_{3}$ based enhancement mode transistor designs are critical for the realization of low loss, high efficiency next generation power devices with rudimentary driving c…

Nb2​O5​ high-k dielectric enabled electric field engineering of β-Ga2​O3​ metal-insulator-semiconductor (MIS) diode

Charge trap layer enabled positive tunable Vfb​ in β-Ga2​O3​ gate stacks for enhancement mode transistors

Nb $_{2}$ O $_{5}$ high-k dielectric enabled electric field engineering of $β$ -Ga $_{2}$ O $_{3}$ metal-insulator-semiconductor (MIS) diode

Charge trap layer enabled positive tunable V $_{f b}$ in $β$ -Ga $_{2}$ O $_{3}$ gate stacks for enhancement mode transistors