activity
20202026
most citedOperating semiconductor quantum processors with hopping spins

80 citations · 334 across the 26 of their papers we have counts for

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Showing cond-mat.mes-hallShow all

24 papers · 1 filter

cond-mat.mes-hall2026

Buried germanium quantum well proximitised by magnetic field-resilient superconducting platinum iridium germanosilicide

Praveen Viswanathan, Erik Lemmens Sjöstrand, Davide Costa +8

Hybrid superconductor-semiconductor systems provide a versatile platform for quantum technologies, ranging from superconducting-spin interfaces to topological quantum devices. Prog…

cond-mat.mes-hall2026

A Degenerate Singlet-Triplet Qubit with All-Electrical Orthogonal Control

Phuong X. Nguyen, Konstantinos Tsoukalas, Jann H. Ungerer +8

Singlet-triplet qubits offer an attractive encoding for semiconductor quantum computing, combining ancilla-free readout, reduced sensitivity to common-mode noise, and baseband volt…

cond-mat.mes-hall2026

Large quantum dot energy level shifts in anomalous photon-assisted tunneling

Jared Benson, C. E. Sturner, A. R. Huffman +12

Orbital energy splittings are important quantum dot parameters for the operation of hole spin qubits. They are known to depend on the lateral confinement of the quantum dots. Howev…

cond-mat.mes-hall2025

Automated electrostatic characterization of quantum dot devices in single- and bilayer heterostructures

Merritt P. R. Losert, Dario Denora, Barnaby van Straaten +6

As quantum dot (QD)-based spin qubits advance toward larger, more complex device architectures, rapid, automated device characterization and data analysis tools become critical. Th…

cond-mat.mes-hall2025

Towards autonomous time-calibration of large quantum-dot devices: Detection, real-time feedback, and noise spectroscopy

Anantha S. Rao, Barnaby van Straaten, Valentin John +8

The performance and scalability of semiconductor quantum-dot (QD) qubits are limited by electrostatic drift and charge noise that shift operating points and destabilize qubit param…

cond-mat.mes-hall2025

A Three-Dimensional Array of Quantum Dots

Hanifa Tidjani, Dario Denora, Michael Chan +6

Quantum dots can confine single electrons or holes to define spin qubits that can be operated with high fidelity. Experimental work has progressed from linear to two-dimensional ar…

cond-mat.mes-hall2025

Conductance Plateaus at Quantum Hall Integer Filling Factors in Germanium Quantum Point Contacts

Karina Hudson, Davide Costa, Davide Degli Esposti +2

Constricting transport through a one-dimensional quantum point contact in the quantum Hall regime enables gate-tunable selection of the edge modes propagating between voltage probe…

cond-mat.mes-hall2025

Using Landau quantization to probe disorder in semiconductor heterostructures

Asser Elsayed, Davide Costa, Lucas E. A. Stehouwer +5

Understanding scattering mechanisms in semiconductor heterostructures is crucial to reducing sources of disorder and ensuring high yield and uniformity in large spin qubit arrays.…

cond-mat.mes-hall2025

Quantum oscillations in two-dimensional hole gases with competing cyclotron and Zeeman energy

Davide Costa, Lucas E. A. Stehouwer, Davide Degli Esposti +1

Evaluation of critical bandstructure and quantum transport parameters in two-dimensional systems is challenging when competition emerges among different energy scales shaping quant…

cond-mat.mes-hall2025

Buried unstrained germanium channels: a lattice-matched platform for quantum technology

Davide Costa, Patrick Del Vecchio, Karina Hudson +8

Strained Ge (-Ge) and strained Si (-Si) buried quantum wells have enabled advanced spin-qubit quantum processors. However, in the absence of suitable lattice-matched substrat…

cond-mat.mes-hall2025

Engineering Ge profiles in Si/SiGe heterostructures for increased valley splitting

Lucas E. A. Stehouwer, Merrit P. Losert, Maia Rigot +6

Electron spin qubits in Si/SiGe quantum wells are limited by the small and variable energy separation of the conduction band valleys. While sharp quantum well interfaces are pursue…

cond-mat.mes-hall2025

QARPET: A Crossbar Chip for Benchmarking Semiconductor Spin Qubits

Alberto Tosato, Asser Elsayed, Federico Poggiali +5

Large-scale integration of semiconductor spin qubits into quantum processors hinges on the ability to characterize quantum components at scale, a task challenged by their operation…

cond-mat.mes-hall2024★ 11 cited

A two-dimensional 10-qubit array in germanium with robust and localised qubit control

Valentin John, Cécile X. Yu, Barnaby van Straaten +10

Quantum computers require the systematic operation of qubits with high fidelity. For holes in germanium, the spin-orbit interaction allows for \textit{in situ} electric fast and hi…

cond-mat.mes-hall2024★ 8 cited

Reducing disorder in Ge quantum wells by using thick SiGe barriers

Davide Costa, Lucas E. A. Stehouwer, Yi Huang +4

We investigate the disorder properties of two-dimensional hole gases in Ge/SiGe heterostructures grown on Ge wafers, using thick SiGe barriers to mitigate the influence of the semi…

cond-mat.mes-hall2024★ 10 cited

Modular Autonomous Virtualization System for Two-Dimensional Semiconductor Quantum Dot Arrays

Anantha S. Rao, Donovan Buterakos, Barnaby van Straaten +8

Arrays of gate-defined semiconductor quantum dots are among the leading candidates for building scalable quantum processors. High-fidelity initialization, control, and readout of s…

cond-mat.mes-hall2024★ 16 cited

Exploiting epitaxial strained germanium for scaling low noise spin qubits at the micron-scale

Lucas E. A. Stehouwer, Cécile X. Yu, Barnaby van Straaten +10

Disorder in the heterogeneous material stack of semiconductor spin qubit systems introduces noise that compromises quantum information processing, posing a challenge to coherently…

cond-mat.mes-hall2024★ 17 cited

A quantum dot in germanium proximitized by a superconductor

Lazar Lakic, William I. L. Lawrie, David van Driel +6

Planar germanium quantum wells have recently been shown to host hard-gapped superconductivity. Additionally, quantum dot spin qubits in germanium are well-suited for quantum inform…

cond-mat.mes-hall2024★ 80 cited

Operating semiconductor quantum processors with hopping spins

Chien-An Wang, Valentin John, Hanifa Tidjani +16

Qubits that can be efficiently controlled are essential for the development of scalable quantum hardware. While resonant control is used to execute high-fidelity quantum gates, the…

cond-mat.mes-hall2023★ 2 cited

Gate modulation of the hole singlet-triplet qubit frequency in germanium

John Rooney, Zhentao Luo, Lucas E. A. Stehouwer +3

Spin qubits in germanium gate-defined quantum dots have made considerable progress within the last few years, partially due to their strong spin-orbit coupling and site-dependent $…

cond-mat.mes-hall2023★ 40 cited

Low disorder and high valley splitting in silicon

Davide Degli Esposti, Lucas E. A. Stehouwer, Önder Gül +13

The electrical characterisation of classical and quantum devices is a critical step in the development cycle of heterogeneous material stacks for semiconductor spin qubits. In the…

cond-mat.mes-hall2023

A vertical gate-defined double quantum dot in a strained germanium double quantum well

Hanifa Tidjani, Alberto Tosato, Alexander Ivlev +6

Gate-defined quantum dots in silicon-germanium heterostructures have become a compelling platform for quantum computation and simulation. Thus far, developments have been limited t…

cond-mat.mes-hall2023★ 48 cited

Germanium wafers for strained quantum wells with low disorder

Lucas E. A. Stehouwer, Alberto Tosato, Davide Degli Esposti +4

We grow strained Ge/SiGe heterostructures by reduced-pressure chemical vapor deposition on 100 mm Ge wafers. The use of Ge wafers as substrates for epitaxy enables high-quality Ge-…

cond-mat.mes-hall2021★ 78 cited

Atomic fluctuations lifting the energy degeneracy in Si/SiGe quantum dots

Brian Paquelet Wuetz, Merritt P. Losert, Sebastian Koelling +16

Electron spins in Si/SiGe quantum wells suffer from nearly degenerate conduction band valleys, which compete with the spin degree of freedom in the formation of qubits. Despite att…

cond-mat.mes-hall2020★ 15 cited

Effect of quantum Hall edge strips on valley splitting in silicon quantum wells

Brian Paquelet Wuetz, Merritt P. Losert, Alberto Tosato +10

We determine the energy splitting of the conduction-band valleys in two-dimensional electrons confined to low-disorder Si quantum wells. We probe the valley splitting dependence on…