69 citations · 119 across the 4 of their papers we have counts for
4 papers
Impact of gate voltage on switching field of perpendicular magnetic tunnel junctions with a synthetic antiferromagnetic free layer
K. Fan, S. V. Beek, G. Talmelli +11
We present micromagnetic simulations and experiments on voltage-assisted field switching in perpendicular magnetic tunnel junctions (MTJs) with a synthetic antiferromagnetic (SAF)…
Back-hopping in Spin-Transfer-Torque switching of perpendicularly magnetized tunnel junctions
T. Devolder, O. Bultynck, P. Bouquin +7
We analyse the phenomenon of back-hopping in spin-torque induced switching of the magnetization in perpendicularly magnetized tunnel junctions. The analysis is based on single-shot…
Ferromagnetic resonance study of composite Co/Ni - FeCoB free layers with perpendicular anisotropy
T. Devolder, E. Liu, J. Swerts +6
We study the properties of composite free layers with perpendicular anisotropy. The free layers are made of a soft FeCoB layer ferromagnetically coupled by a variable spacer (Ta, W…
Time-resolved spin-torque switching in MgO-based perpendicularly magnetized tunnel junctions
T. Devolder, Joo-Von Kim, F. Garcia-Sanchez +5
We study ns scale spin-torque-induced switching in perpendicularly magnetized tunnel junctions (pMTJ). Although the switching voltages match with the macrospin instability threshol…