3 papers
cs.ET2026
From sLLG to Fokker-Planck: Accurate WER Modeling for Non-Axisymmetric MRAM Devices
Fernando Garcia Redondo, Trisha Bhowmik, Maxwel Gama Monteiro +4
The Fokker--Planck (FP) equation is essential for predicting write error rates (WER) in STT and SOT-MRAM devices, but traditional 1D projections fail when symmetry is broken by in-…
cond-mat.mes-hall2026
Impact of gate voltage on switching field of perpendicular magnetic tunnel junctions with a synthetic antiferromagnetic free layer
K. Fan, S. V. Beek, G. Talmelli +11
We present micromagnetic simulations and experiments on voltage-assisted field switching in perpendicular magnetic tunnel junctions (MTJs) with a synthetic antiferromagnetic (SAF)…
cond-mat.mtrl-sci2020
Back-hopping in Spin-Transfer-Torque switching of perpendicularly magnetized tunnel junctions
T. Devolder, O. Bultynck, P. Bouquin +7
We analyse the phenomenon of back-hopping in spin-torque induced switching of the magnetization in perpendicularly magnetized tunnel junctions. The analysis is based on single-shot…