activity
20202024
most cited2.5-kV AlGaN/GaN Schottky Barrier Diode on Silicon Substrate with Recessed-anode Structure

27 citations · 28 across the 6 of their papers we have counts for

collaborators
Showing 2022Show all

1 paper · 1 filter

cond-mat.mtrl-sci2022

A Lateral AlGaN/GaN Schottky Barrier Diode with 0.36 V Turn-on Voltage and 10 kV Breakdown Voltage by Using Double Barrier Anode Structure

Ru Xu, Peng Chen, Jing Zhou +9

In this letter, we demonstrate a lateral AlGaN/GaN Schottky barrier diode (SBD) on sapphire substrate with low turn-on voltage (Von) and high breakdown voltage (VBK). By using a do…