1 citations · 1 across the 4 of their papers we have counts for
5 papers
Cavity Plasmon: Enhanced Luminescence Effect on InGaN Light Emitting Diodes
Yuyin Li, Jing Zhou, Ziwen Yan +10
We fabricated polygonal nanoholes in the top p-GaN layer of the InGaN/GaN light-emitting diode, followed by the deposition of Au/Al metal thin film within the nanoholes to create m…
Enhanced optical performance of GaN Micro-light-emitting diodes with a single porous layer
Ziwen Yan, Xianfei Zhang, Yuyin Li +8
High-efficiency micro-light-emitting diodes (Micro-LEDs) are key devices for next-generation display technology. However, when the mesa size is reduced to around tens of micrometer…
Study on the efficiency droop in high-quality GaN material under high photoexcitation intensity
Peng Chen, Zili Xie, Xiangqian Xiu +6
III-V nitride semiconductors, represented by GaN, have attracted significant research attention. Driven by the growing interest in smart micro-displays, there is a strong desire to…
High power Figure-of-Merit, 10.6-kV AlGaN/GaN lateral Schottky barrier diode with single channel and sub-100-μm anode-to-cathode spacing
Ru Xu, Peng Chen, Jing Zhou +13
GaN-based lateral Schottky diodes (SBDs) have attracted great attention for high-power applications due to its combined high electron mobility and large critical breakdown field. H…
2.5-kV AlGaN/GaN Schottky Barrier Diode on Silicon Substrate with Recessed-anode Structure
Ru Xu, Peng Chen, Menghan Liu +9
In this letter, we demonstrate high-performance lateral AlGaN/GaN Schottky barrier diodes (SBD) on Si substrate with a recessed-anode structure. The optimized rapid etch process pr…