2 papers
physics.app-ph2020
Piezoresistance in defect-engineered silicon
H. Li, A. Thayil, C. T. K. Lew +5
The steady-state, space-charge-limited piezoresistance (PZR) of defect-engineered, silicon-on-insulator device layers containing silicon divacancy defects changes sign as a functio…
cond-mat.mes-hall2018
Mechanical stress dependence of the Fermi level pinning on an oxidized silicon surface
H. Li, L. Martinelli, F. Cadiz +4
A combination of micro-Raman spectroscopy and micro-XPS (X-ray photo-electron spectroscopy) mapping on statically deflected p-type silicon cantilevers is used to study the mechanic…