activity
20152023
most citedGoing Ballistic: Graphene Hot Electron Transistors

41 citations · 107 across the 7 of their papers we have counts for

collaborators

7 papers

cs.ET2023

Modelling and Simulations of Ferroelectric Materials and Ferroelectric-Based Nanoelectronic Devices

David Esseni, Francesco Driussi, Daniel Lizzit +2

This paper provides a brief introduction to the phenomenological aspects of the polarization in ferrroelectric materials, and then an analysis of a few selected topics related to t…

physics.app-ph2023★ 22 cited

Charge-Trapping-Induced Compensation of the Ferroelectric Polarization in FTJs: Optimal Conditions for a Synaptic Device Operation

R. Fontanini, M. Segatto, K. S. Nair +7

In this work, we present a clear evidence, based on numerical simulations and experiments, that the polarization compensation due to trapped charge strongly influences the ON/ OFF…

cond-mat.mtrl-sci2022★ 13 cited

Limitations to Electrical Probing of Spontaneous Polarization in Ferroelectric-Dielectric Heterostructures

Mattia Segatto, Riccardo Fontanini, Francesco Driussi +2

An accurate estimate of the ferroelectric polarization in ferroelectric-dielectric stacks is important from a materials science perspective, and it is also crucial for the developm…

cs.ET2021

Ferroelectric based FETs and synaptic devices for highly energy efficient computational technologies

David Esseni, Riccardo Fontanini, Daniel Lizzit +3

The technological exploitation of ferroelectricity in CMOS electron devices offers new design opportunities, but also significant challenges from an integration, optimization and m…

cs.ET2021

Modelling and design of FTJs as high reading-impedance synaptic devices

Riccardo Fontanini, Marco Massarotto, Ruben Specogna +3

We present an in-house modelling framework for Ferroelectric Tunnelling Junctions (FTJ), and an insightful study of the design of FTJs as synaptic devices. Results show that a mode…

physics.app-ph2020★ 31 cited

Dependable contact related parameter extraction in graphene-metal junctions

Amit Gahoi, Satender Kataria, Francesco Driussi +5

The accurate extraction and the reliable, repeatable reduction of graphene - metal contact resistance (R) are still open issues in graphene technology. Here, we demonstrate t…

cond-mat.mes-hall2015★ 41 cited

Going Ballistic: Graphene Hot Electron Transistors

Sam Vaziri, Anderson D. Smith, Mikael Östling +11

This paper reviews the experimental and theoretical state of the art in ballistic hot electron transistors that utilize two-dimensional base contacts made from graphene, i.e. graph…