59 citations · 223 across the 14 of their papers we have counts for
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Ultrawide bandgap semiconductor heterojunction p-n diodes with distributed polarization doped p-type AlGaN layers on bulk AlN substrates
Shivali Agrawal, Len van Deurzen, Jimy Encomendero +7
Ultrawide bandgap heterojunction p-n diodes with polarization-induced AlGaN p-type layers are demonstrated using plasma-assisted molecular beam epitaxy on bulk AlN substrates. Curr…
Excitonic and deep-level emission from N- and Al-polar homoepitaxial AlN grown by molecular beam epitaxy
Len van Deurzen, Jashan Singhal, Jimy Encomendero +8
Using low-temperature cathodoluminescence spectroscopy, we study the properties of N- and Al-polar AlN layers grown by molecular beam epitaxy on bulk AlN{0001}. Compared to the bul…
Defeating Broken Symmetry with Doping: Symmetric Resonant Tunneling in Noncentrosymetric Heterostructures
Jimy Encomendero, Vladimir Protasenko, Debdeep Jena +1
Resonant tunneling transport in polar heterostructures is intimately connected to the polarization fields emerging from the geometric Berry-phase. In these structures, quantum conf…
Fighting Broken Symmetry with Doping: Toward Polar Resonant Tunneling Diodes with Symmetric Characteristics
Jimy Encomendero, Vladimir Protasenko, Farhan Rana +2
The recent demonstration of resonant tunneling transport in nitride semiconductors has led to an invigorated effort to harness this quantum transport regime for practical applicati…
Broken Symmetry Effects due to Polarization on Resonant Tunneling Transport in Double-Barrier Nitride Heterostructures
Jimy Encomendero, Vladimir Protasenko, Berardi Sensale-Rodriguez +4
The phenomenon of resonant tunneling transport through polar double-barrier heterostructures is systematically investigated using a combined experimental and theoretical approach.…
FerroHEMTs: High-Current and High-Speed All-Epitaxial AlScN/GaN Ferroelectric Transistors
J. Casamento, K. Nomoto, T. S. Nguyen +11
We report the first observation of ferroelectric gating in AlScN barrier wide-bandgap nitride transistors. These FerroHEMT devices realized by direct epitaxial growth represent a n…