59 citations · 223 across the 14 of their papers we have counts for
14 papers
Shubnikov-de Haas oscillations of two-dimensional electron gases in AlYN/GaN and AlScN/GaN heterostructures
Yu-Hsin Chen, Thai-Son Nguyen, Isabel Streicher +4
AlYN and AlScN have recently emerged as promising nitride materials that can be integrated with GaN to form two-dimensional electron gases (2DEGs) at heterojunctions. Electron tran…
XHEMTs on Ultrawide Bandgap Single-Crystal AlN Substrates
Eungkyun Kim, Yu-Hsin Chen, Naomi Pieczulewski +4
AlN has the largest bandgap in the wurtzite III-nitride semiconductor family, making it an ideal barrier for a thin GaN channel to achieve strong carrier confinement in field-effec…
Shubnikov-de Haas oscillations in coherently strained AlN/GaN/AlN quantum wells on bulk AlN substrates
Yu-Hsin Chen, Jimy Encomendero, Huili Grace Xing +1
We report the observation of Shubnikov-de Haas (SdH) oscillations in coherently strained, low-dislocation AlN/GaN/AlN quantum wells (QWs), including both undoped and -doped stru…
Quantum oscillations of holes in GaN
Chuan F. C. Chang, Joseph E. Dill, Zexuan Zhang +12
GaN has emerged to be a major semiconductor akin to silicon due to its revolutionary impacts in solid state lighting, critically enabled by p-type doping, and high-performance radi…
Measurement of Spin-Polarized Photoemission from Wurtzite and Zinc-Blende Gallium Nitride Photocathodes
S. J. Levenson, M. B. Andorf, B. D. Dickensheets +7
Spin-polarized photoemission from wurtzite and zinc-blende gallium nitride (GaN) photocathodes has been observed and measured for the first time. The p-doped GaN photocathodes were…
Ultrawide bandgap semiconductor heterojunction p-n diodes with distributed polarization doped p-type AlGaN layers on bulk AlN substrates
Shivali Agrawal, Len van Deurzen, Jimy Encomendero +7
Ultrawide bandgap heterojunction p-n diodes with polarization-induced AlGaN p-type layers are demonstrated using plasma-assisted molecular beam epitaxy on bulk AlN substrates. Curr…
Excitonic and deep-level emission from N- and Al-polar homoepitaxial AlN grown by molecular beam epitaxy
Len van Deurzen, Jashan Singhal, Jimy Encomendero +8
Using low-temperature cathodoluminescence spectroscopy, we study the properties of N- and Al-polar AlN layers grown by molecular beam epitaxy on bulk AlN{0001}. Compared to the bul…
Defeating Broken Symmetry with Doping: Symmetric Resonant Tunneling in Noncentrosymetric Heterostructures
Jimy Encomendero, Vladimir Protasenko, Debdeep Jena +1
Resonant tunneling transport in polar heterostructures is intimately connected to the polarization fields emerging from the geometric Berry-phase. In these structures, quantum conf…
Fighting Broken Symmetry with Doping: Toward Polar Resonant Tunneling Diodes with Symmetric Characteristics
Jimy Encomendero, Vladimir Protasenko, Farhan Rana +2
The recent demonstration of resonant tunneling transport in nitride semiconductors has led to an invigorated effort to harness this quantum transport regime for practical applicati…
Broken Symmetry Effects due to Polarization on Resonant Tunneling Transport in Double-Barrier Nitride Heterostructures
Jimy Encomendero, Vladimir Protasenko, Berardi Sensale-Rodriguez +4
The phenomenon of resonant tunneling transport through polar double-barrier heterostructures is systematically investigated using a combined experimental and theoretical approach.…
FerroHEMTs: High-Current and High-Speed All-Epitaxial AlScN/GaN Ferroelectric Transistors
J. Casamento, K. Nomoto, T. S. Nguyen +11
We report the first observation of ferroelectric gating in AlScN barrier wide-bandgap nitride transistors. These FerroHEMT devices realized by direct epitaxial growth represent a n…
Molecular Beam Homoepitaxy of N-polar AlN on bulk AlN substrates
Jashan Singhal, Jimy Encomendero, Yongjin Cho +6
N-polar AlN epilayers were grown on the N-face of single crystal bulk AlN substrates by plasma assisted molecular beam epitaxy (PA-MBE). A combination of in situ thermal deoxidatio…
N-polar GaN/AlN resonant tunneling diodes
YongJin Cho, Jimy Encomendero, Shao-Ting Ho +2
N-polar GaN/AlN resonant tunneling diodes are realized on single-crystal N-polar GaN bulk substrate by plasma-assisted molecular beam epitaxy growth. The room-temperature current-v…
Repeatable Room Temperature Negative Differential Conductance in GaN/AlN Resonant Tunneling Diodes
Jimy Encomendero, Faiza Afroz Faria, S. M. Islam +5
Double barrier GaN/AlN resonant tunneling heterostructures have been grown by molecular beam epitaxy on the (0001) plane of commercially available bulk GaN substrates. Resonant tun…