Indium-Tin-Oxide Transistors with One Nanometer Thick Channel and Ferroelectric Gating

Mengwei Si, Joseph Andler, Xiao Lyu +4

In this work, we demonstrate high performance indium-tin-oxide (ITO) transistors with the channel thickness down to 1 nm and ferroelectric Hf0.5Zr0.5O2 as gate dielectric. On-curre…