85 citations · 204 across the 19 of their papers we have counts for
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Identification of carbon-related color centers in hBN by high-resolution ab initio photoluminescence modeling
Vytautas Žalandauskas, Marek Maciaszek, Marianne Etzelmüller Bathen +3
Identification of optically active defects in hexagonal boron nitride (hBN) remains challenging because different defect candidates can produce similar calculated photoluminescence…
Device contacts as spin-state selectors for silicon vacancies in 4H-SiC
Aurora Teien, Maria Mendes Martins, Andreas Gottscholl +11
Optically addressable defect spins in semiconductors are promising building blocks for scalable quantum technologies. Yet, the consequences of conventional contact schemes used in…
Fine structure of the M-center in Si
Aurora Teien, David R. Gongora, Arnulf Johannes Snedker-Nielsen +6
Color centers in silicon offer great possibilities for scalable quantum technologies. The M-center, proposed to originate from a carbon-hydrogen complex, offers telecommunications-…
Muonium dynamics as a probe for depth-resolved properties of 4H-SiC
Maria Mendes Martins, Piyush Kumar, Marianne E. Bathen +5
This study establishes a baseline for muonium (Mu) charge-exchange dynamics in n-type 4H-SiC through a detailed low-energy muon spin rotation (LE-uSR) investigation. Epitaxially gr…
Unraveling the electronic structure of silicon vacancy centers in 4H-SiC
Ali Tayefeh Younesi, Minh Tuan Luu, Christopher Linderälv +7
Point defects in silicon carbide (SiC), particularly the negatively-charged silicon vacancy () in 4H-SiC, are leading candidates for scalable quantum technolog…
Impact of strain on electron-phonon coupling of quantum emitters
Vytautas Žalandauskas, Rokas Silkinis, Lukas Razinkovas +6
Defects in semiconductors acting as optically active spin qubits are intriguing objects of fundamental study and future technological developments. These defect-based color centers…
Theory of the divacancy in 4H-SiC: Impact of Jahn-Teller effect on optical properties
Vytautas Žalandauskas, Rokas Silkinis, Lasse Vines +2
Understanding the optical properties of color centers in silicon carbide is essential for their use in quantum technologies, such as single-photon emission and spin-based qubits. I…
Optical lineshapes of the C-center in silicon from ab initio calculations: Interplay of localized modes and bulk phonons
Rokas Silkinis, Marek Maciaszek, Vytautas Žalandauskas +4
In this work, we present a first-principles density functional theory (DFT) computational investigation of the luminescence and absorption lineshapes associated with the neutral ca…
Surface Structuring of Patterned 4H-SiC Surfaces Using a SiC/Si/SiC Sandwich Approach
Yann Jousseaume, Piyush Kumar, Marianne Etzelmüller Bathen +3
Mesa- and trench-patterned surfaces of 4H-SiC(0001) 4{\textdegree}off wafers were structured in macrosteps using Si melting in a SiC-Si-SiC sandwich configuration. Si spreading dif…
Investigation of the SiO2-SiC interface using low energy muon spin rotation spectroscopy
Piyush Kumar, Maria Inês Mendes Martins, Marianne Etzelmüller Bathen +3
Using positive muons as local probes implanted at low energy enables gathering information about the material of interest with nanometer depth resolution (low energy muon spin rota…
Predicting Solid State Material Platforms for Quantum Technologies
Oliver Lerstøl Hebnes, Marianne Etzelmüller Bathen, Øyvind Sigmundson Schøyen +3
Semiconductor materials provide a compelling platform for quantum technologies (QT), and the properties of a vast amount of materials can be found in databases containing informati…
The Diamond (111) Surface Reconstruction and Epitaxial Graphene Interface
B. P. Reed, M. E. Bathen, J. W. R. Ash +6
The evolution of the diamond (111) surface as it undergoes reconstruction and subsequent graphene formation is investigated with angle-resolved photoemission spectroscopy, low ener…
Conversion pathways of primary defects by annealing in proton-irradiated n-type 4H-SiC
Robert Karsthof, Marianne Etzelmüller Bathen, Augustinas Galeckas +1
The development of defect populations after proton irradiation of n-type 4H-SiC and subsequent annealing experiments is studied by means of deep level transient (DLTS) and photolum…