85 citations · 204 across the 19 of their papers we have counts for
20 papers
Identification of carbon-related color centers in hBN by high-resolution ab initio photoluminescence modeling
Vytautas Žalandauskas, Marek Maciaszek, Marianne Etzelmüller Bathen +3
Identification of optically active defects in hexagonal boron nitride (hBN) remains challenging because different defect candidates can produce similar calculated photoluminescence…
Device contacts as spin-state selectors for silicon vacancies in 4H-SiC
Aurora Teien, Maria Mendes Martins, Andreas Gottscholl +11
Optically addressable defect spins in semiconductors are promising building blocks for scalable quantum technologies. Yet, the consequences of conventional contact schemes used in…
Fine structure of the M-center in Si
Aurora Teien, David R. Gongora, Arnulf Johannes Snedker-Nielsen +6
Color centers in silicon offer great possibilities for scalable quantum technologies. The M-center, proposed to originate from a carbon-hydrogen complex, offers telecommunications-…
Muonium dynamics as a probe for depth-resolved properties of 4H-SiC
Maria Mendes Martins, Piyush Kumar, Marianne E. Bathen +5
This study establishes a baseline for muonium (Mu) charge-exchange dynamics in n-type 4H-SiC through a detailed low-energy muon spin rotation (LE-uSR) investigation. Epitaxially gr…
Epitaxial single T centres in silicon-on-insulator
Christian H. Christiansen, Kasper H. Nielsen, Alisha Nanwani +26
Spin-photon interfaces based on silicon quantum emitters offer a scalable platform for quantum computing and networking. However, achieving coherent photon emission remains a prima…
Seeing the forbidden: overcoming optical selection rules through nanophotonic integration
Alex H. Rubin, Vytautas Žalandauskas, Pranta Saha +7
Optically addressable spin defects in silicon carbide, including the neutral divacancy (VV) and the negative nitrogen-vacancy (NV), are among leading building blocks of sol…