33 citations · 36 across the 4 of their papers we have counts for
4 papers
Low Thermal Conductivity Phase Change Memory Superlattices
Jing Ning, Xilin Zhou, Yunzheng Wang +6
Phase change memory devices are typically reset by melt-quenching a material to radically lower its electrical conductance. The high power and concomitantly high current density re…
Minimizing the programming power of phase change memory by using graphene nanoribbon edge-contact
Xiujun Wang, Sannian Song, Haomin Wang +15
Nonvolatile phase change random access memory (PCRAM) is regarded as one of promising candidates for emerging mass storage in the era of Big Data. However, relatively high programm…
Crystallization Mechanism Tuned Phase-Change Materials: Quantum Effect on Te-Terminated Boundary
Wen-Xiong Song, Qiongyan Tang, Jin Zhao +8
While phase-change materials (PCMs) composed of chalcogenide have different crystallization mechanisms (CM), such as nucleation-dominated Ge2Sb2Te5 (GST) and growth-dominated GeTe…
Bias Scheme Reducing Transient Currents and Speeding up Read Operations for 3-D Cross Point PCM
Yu Lei, Meng Liu, Houpeng Chen +3
3-D cross point phase change memory (PCM) is a promising emerging memory. However, dynamic performances of 3-D cross point PCM are limited and the role of bias scheme is unknown. P…