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cond-mat.mtrl-sci2026
Nanometer-scale operando electric field mapping in oxide junctions by correlative STEM-EBIC and 4D-STEM
Yining Xie, Eoin Moynihan, Xingyao Li +5
Understanding local electric fields at oxide interfaces is essential for linking interfacial electrostatics to device functionality, yet conventional electrical measurements infer…
physics.ins-det2026
Predictive drift compensation of multi-frame STEM via live scan modification
Matthew Mosse, Jonathan J. P. Peters, Eoin Moynihan +4
Scanning transmission electron microscopy (STEM) is widely used tool for materials characterisation. However, being a scanned technique, STEM is susceptible to sample, stage or bea…