185 citations · 274 across the 8 of their papers we have counts for
4 papers · 1 filter
High-Performance Ferroelectric Field-Effect Transistors with Ultra-High Current and Carrier Densities
Seunguk Song, Kwan-Ho Kim, Rachael Keneipp +7
Ferroelectric field-effect transistors (FeFET) with two-dimensional (2D) semiconductor channels are promising low-power, embedded non-volatile memory (NVM) candidates for next-gene…
Reconfigurable Compute-In-Memory on Field-Programmable Ferroelectric Diodes
Xiwen Liu, John Ting, Yunfei He +11
The deluge of sensors and data generating devices has driven a paradigm shift in modern computing from arithmetic-logic centric to data-centric processing. Data-centric processing…
Scalable CMOS-BEOL compatible AlScN/2D Channel FE-FETs
Kwan-Ho Kim, Seyong Oh, Merrilyn Mercy Adzo Fiagbenu +14
Intimate integration of memory devices with logic transistors is a frontier challenge in computer hardware. This integration is essential for augmenting computational power concurr…
Post-CMOS Compatible Aluminum Scandium Nitride/2D Channel Ferroelectric Field-Effect-Transistor
Xiwen Liu, Dixiong Wang, Jeffrey Zheng +5
In 1963, Moll and Tarui suggested that the field-effect conductance of a semiconductor could be controlled by the remanent polarization of a ferroelectric (FE) material to create a…