185 citations · 274 across the 8 of their papers we have counts for
8 papers
Reconfigurable SWCNT ferroelectric field-effect transistor arrays
Dongjoon Rhee, Kwan-Ho Kim, Jeffrey Zheng +5
Reconfigurable devices have garnered significant attention for alleviating the scaling requirements of conventional CMOS technology, as they require fewer components to construct c…
High-Performance Ferroelectric Field-Effect Transistors with Ultra-High Current and Carrier Densities
Seunguk Song, Kwan-Ho Kim, Rachael Keneipp +7
Ferroelectric field-effect transistors (FeFET) with two-dimensional (2D) semiconductor channels are promising low-power, embedded non-volatile memory (NVM) candidates for next-gene…
Multi-State, Ultra-thin, BEOL-Compatible AlScN Ferroelectric Diodes
Kwan-Ho Kim, Zirun Han, Yinuo Zhang +6
The growth in data generation necessitates efficient data processing technologies to address the von Neumann bottleneck in conventional computer architecture. Memory-driven computi…
Non-Volatile Control of Valley Polarized Emission in 2D WSe2-AlScN Heterostructures
Simrjit Singh, Kwan-Ho Kim, Kiyoung Jo +9
Achieving robust and electrically controlled valley polarization in monolayer transition metal dichalcogenides (ML-TMDs) is a frontier challenge for realistic valleytronic applicat…
Reconfigurable Compute-In-Memory on Field-Programmable Ferroelectric Diodes
Xiwen Liu, John Ting, Yunfei He +11
The deluge of sensors and data generating devices has driven a paradigm shift in modern computing from arithmetic-logic centric to data-centric processing. Data-centric processing…
Scalable CMOS-BEOL compatible AlScN/2D Channel FE-FETs
Kwan-Ho Kim, Seyong Oh, Merrilyn Mercy Adzo Fiagbenu +14
Intimate integration of memory devices with logic transistors is a frontier challenge in computer hardware. This integration is essential for augmenting computational power concurr…