activity
20172025
most citedVoltage-controlled antiferromagnetism in magnetic tunnel junctions

38 citations · 102 across the 9 of their papers we have counts for

collaborators
Showing 2022Show all

5 papers · 1 filter

cond-mat.mtrl-sci2022★ 1 cited

Impact of Boron doping to the tunneling magnetoresistance of Heusler alloy Co2FeAl

Ali Habiboglu, Yash Chandak, Pravin Khanal +7

Heusler alloys based magnetic tunnel junctions can potentially provide high magnetoresistance, small damping and fast switching. Here junctions with Co2FeAl as a ferromagnetic elec…

physics.app-ph2022

Interplay of symmetry-conserved tunneling, interfacial oxidation and perpendicular magnetic anisotropy in CoFeB/MgO-based junctions

Pravin Khanal, Bowei Zhou, Hamid Almasi +7

The interfacial oxidation level and thermodynamic properties of the MgO-based perpendicular magnetic tunneling junctions are investigated. The symmetry-conserved tunneling effect d…

physics.app-ph2022★ 1 cited

Perpendicular magnetic anisotropy, tunneling magnetoresistance and spin-transfer torque effect in magnetic tunnel junctions with Nb layers

Bowei Zhou, Pravin Khanal, Onri Jay Benally +7

Nb and its compounds are widely used in quantum computing due to their high superconducting transition temperatures and high critical fields. Devices that combine superconducting p…

cond-mat.mtrl-sci2022★ 5 cited

Enhanced magnetoresistance in perpendicular magnetic tunneling junctions with MgAl2O4 barrier

Pravin Khanal, Bowei Zhou, Magda Andrade +6

Perpendicular magnetic tunnel junction with MgAl2O4 barrier is investigated. It is found that reactive RF sputtering with O2 is essential to obtain strong perpendicular magnetic an…

cond-mat.mtrl-sci2022★ 21 cited

Perpendicular magnetic tunnel junctions with multi-interface free layer

Pravin Khanal, Bowei Zhou, Magda Andrade +8

Future generations of magnetic random access memory demand magnetic tunnel junctions that can provide simultaneously high magnetoresistance, strong retention, low switching energy…