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CoMnZ (Z = Al, Si, Ga, Ge, Sn) Heusler alloys as candidate materials for spintronic and microelectronic applications: Electronic structure, transport, and magnetism
Vyacheslav V. Marchenkov, Alena A. Semiannikova, Evgenii D. Chernov +4
Magnetic and electronic transport properties of CoMnZ (Z = Al, Ga, Ge, Si, Sn) Heusler alloys were experimentally investigated. Electrical resistivity, in the temperature range…
Regularities and features in the behavior of electrical and magnetic properties of CoFeZ (Z = Al, Si, Ga, Ge, Sn, Sb) half-metallic ferromagnetic Heusler alloys
Yu. A. Perevozchikova, V. Yu. Irkhin, A. A. Semiannikova +1
The electrical resistivity, magnetization, and Hall effect in CoFeZ (Z = Al, Si, Ga, Ge, Sn, Sb) ferromagnetic Heusler alloys are studied. A number of correlations between the…
Unusual kinetic properties of usual Heusler alloys
V. V. Marchenkov, V. Yu. Irkhin, A. A. Semiannikova
The review considers various groups of Heusler compounds, which can have the properties of a semiconductor, a half-metallic ferromagnet, a spin gapless semiconductor, a topological…
Electronic, magnetic and galvanomagnetic properties of Co-based Heusler alloys: possible states of a half-metallic ferromagnet and spin gapless semiconductor
A. A. Semiannikova, Yu. A. Perevozchikova, V. Yu Irkhin +3
Parameters of the energy gap and, consequently, electronic, magnetic and galvanomagnetic properties in different XYZ Heusler alloys can vary quite strongly. In particular, half…