105 citations · 368 across the 13 of their papers we have counts for
9 papers · 1 filter
Radiofrequency cascade readout of coupled spin qubits
Jacob F. Chittock-Wood, Ross C. C. Leon, Michael A. Fogarty +12
Silicon spin qubits based on metal-oxide-semiconductor (MOS) technology are compatible with semiconductor manufacturing and offer a route to scalable quantum processing. However, s…
An elongated quantum dot as a distributed charge sensor
S. M. Patomäki, J. Williams, F. Berritta +10
Increasing the separation between semiconductor quantum dots offers scaling advantages by fa- cilitating gate routing and the integration of sensors and charge reservoirs. Elongate…
Low charge noise quantum dots with industrial CMOS manufacturing
Asser Elsayed, Mohamed Shehata, Clement Godfrin +12
Silicon spin qubits are among the most promising candidates for large scale quantum computers, due to their excellent coherence and compatibility with CMOS technology for upscaling…
Physics-Based and Closed-Form Model for Cryo-CMOS Subthreshold Swing
Arnout Beckers, Jakob Michl, Alexander Grill +7
Cryogenic semiconductor device models are essential in designing control systems for quantum devices and in benchmarking the benefits of cryogenic cooling for high-performance comp…
Modelling semiconductor spin qubits and their charge noise environment for quantum gate fidelity estimation
M. Mohamed El Kordy Shehata, George Simion, Ruoyu Li +7
The spin of an electron confined in semiconductor quantum dots is currently a promising candidate for quantum bit (qubit) implementations. Taking advantage of existing CMOS integra…
Uniform Spin Qubit Devices in an All-Silicon 300 mm Integrated Process
N. I. Dumoulin Stuyck, R. Li, C. Godfrin +12
Larger arrays of electron spin qubits require radical improvements in fabrication and device uniformity. Here we demonstrate excellent qubit device uniformity and tunability from 3…
Low dephasing and robust micromagnet designs for silicon spin qubits
N. I. Dumoulin Stuyck, F. A. Mohiyaddin, R. Li +3
Using micromagnets to enable electron spin manipulation in silicon qubits has emerged as a very popular method, enabling single-qubit gate fidelities larger than 99:9%. However, th…
High mobility SiMOSFETs fabricated in a full 300mm CMOS process
Timothy N. Camenzind, Asser Elsayed, Fahd A. Mohiyaddin +7
The quality of the semiconductor-barrier interface plays a pivotal role in the demonstration of high quality reproducible quantum dots for quantum information processing. In this w…
A flexible 300 mm integrated Si MOS platform for electron- and hole-spin qubits exploration
R. Li, N. I. Dumoulin Stuyck, S. Kubicek +12
We report on a flexible 300 mm process that optimally combines optical and electron beam lithography to fabricate silicon spin qubits. It enables on-the-fly layout design modificat…