Laser-assisted atom probe tomography of c-plane and m-plane InGaN test structures

N. A. Sanford, P. T. Blanchard, M. D. Brubaker +6

Laser-assisted atom probe tomography (APT) was used to measure the indium mole fraction x of c-plane, MOCVD-grown, GaN/In(x)Ga(1-x)N/GaN test structures and the results were compar…