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cond-mat.mtrl-sci2022
A Lateral AlGaN/GaN Schottky Barrier Diode with 0.36 V Turn-on Voltage and 10 kV Breakdown Voltage by Using Double Barrier Anode Structure
Ru Xu, Peng Chen, Jing Zhou +9
In this letter, we demonstrate a lateral AlGaN/GaN Schottky barrier diode (SBD) on sapphire substrate with low turn-on voltage (Von) and high breakdown voltage (VBK). By using a do…
cond-mat.mtrl-sci2021
High power Figure-of-Merit, 10.6-kV AlGaN/GaN lateral Schottky barrier diode with single channel and sub-100-μm anode-to-cathode spacing
Ru Xu, Peng Chen, Jing Zhou +13
GaN-based lateral Schottky diodes (SBDs) have attracted great attention for high-power applications due to its combined high electron mobility and large critical breakdown field. H…