27 citations · 27 across the 5 of their papers we have counts for
5 papers
Cavity Plasmon: Enhanced Luminescence Effect on InGaN Light Emitting Diodes
Yuyin Li, Jing Zhou, Ziwen Yan +10
We fabricated polygonal nanoholes in the top p-GaN layer of the InGaN/GaN light-emitting diode, followed by the deposition of Au/Al metal thin film within the nanoholes to create m…
A Lateral AlGaN/GaN Schottky Barrier Diode with 0.36 V Turn-on Voltage and 10 kV Breakdown Voltage by Using Double Barrier Anode Structure
Ru Xu, Peng Chen, Jing Zhou +9
In this letter, we demonstrate a lateral AlGaN/GaN Schottky barrier diode (SBD) on sapphire substrate with low turn-on voltage (Von) and high breakdown voltage (VBK). By using a do…
High power Figure-of-Merit, 10.6-kV AlGaN/GaN lateral Schottky barrier diode with single channel and sub-100-μm anode-to-cathode spacing
Ru Xu, Peng Chen, Jing Zhou +13
GaN-based lateral Schottky diodes (SBDs) have attracted great attention for high-power applications due to its combined high electron mobility and large critical breakdown field. H…
Localized surface plasmon enhanced InGaN-based light-emitting diodes with polygonal Au/Al nanoparticles
Xiaokang Mao, Zhiguo Yu, Peng Che +11
Localized surface plasmons (LSPs) have played a significant role in improving the light emission efficiency of light emitting diodes (LEDs). In this report, polygonal nanoholes hav…
2.5-kV AlGaN/GaN Schottky Barrier Diode on Silicon Substrate with Recessed-anode Structure
Ru Xu, Peng Chen, Menghan Liu +9
In this letter, we demonstrate high-performance lateral AlGaN/GaN Schottky barrier diodes (SBD) on Si substrate with a recessed-anode structure. The optimized rapid etch process pr…