41 citations · 120 across the 7 of their papers we have counts for
5 papers · 1 filter
Short Term Reliability and Robustness of ultra-thin barrier, 110 nm-gate AlN/GaN HEMTs
Zhan Gao, Matteo Meneghini, Kathia Harrouche +9
Short-term reliability and robustness of 110 nm AlN/GaN HEMTs has been evaluated by means of off-state, semi-on state and on-state step stress tests on devices having different gat…
Degradation mechanism of 0.15 um AlGaN/GaN HEMTs: effects of hot electrons
Z. Gao, F. Rampazzo, M. Meneghini +5
The degradation mechanisms of AlGaN/GaN HEMTs adopting Fe and C co-doping, with high and low carbon doping concentration were investigated by means of hot-electron step stress and…
OFF-state trapping phenomena in GaN HEMTs: interplay between gate trapping, acceptor ionization and positive charge redistribution
E. Canato, M. Meneghini, C. De Santi +5
We present an extensive analysis of the trapping processes induced by drain bias stress in AlGaN/GaN high-electron-mobility transistors (HEMTs) with p-GaN gate. We demonstrate that…
Vertical GaN Devices: Process and Reliability
Shuzhen You, Karen Geens, Matteo Borga +14
This paper reviews recent progress and key challenges in process and reliability for high-performance vertical GaN transistors and diodes, focusing on the 200 mm CMOS-compatible te…
Exploration of Gate Trench Module for Vertical GaN devices
M. Ruzzarin, K. Geens, M. Borga +9
The aim of this work is to present the optimization of the gate trench module for use in vertical GaN devices in terms of cleaning process of the etched surface of the gate trench,…