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cond-mat.mes-hall2017
The effect of the three-dimensional strain variation on the emission properties of light-emitting diodes based on (In,Ga)N/GaN nanowires
M. Musolino, F. Sacconi, A. Tahraoui +5
In the experimental electroluminescence (EL) spectra of light-emitting diodes (LEDs) based on N-polar (In,Ga)N/GaN nanowires (NWs), we observed a double peak structure. The relativ…
cond-mat.mes-hall2015★ 41 cited
A physical model for the reverse leakage current in (In,Ga)N/GaN light-emitting diodes based on nanowires
M. Musolino, D. van Treeck, A. Tahraoui +6
We investigated the origin of the high reverse leakage current in light emitting diodes (LEDs) based on (In,Ga)N/GaN nanowire (NW) ensembles grown by molecular beam epitaxy on Si s…