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cond-mat.mtrl-sci2020★ 2 cited
Characterization of the Chemical and Electrical Properties of Defects at the Niobium-Silicon Interface
Cameron Kopas, Madhu Krishna Murthy, Christopher Gregory +4
The nature and concentration of defects near niobium-silicon interfaces prepared with different silicon surface treatments were characterized using current-voltage (I-V), deep leve…
physics.app-ph2020
Low microwave loss in deposited Si and Ge thin-film dielectrics at single-photon power and low temperatures
Cameron J. Kopas, Justin Gonzales, Shengke Zhang +5
Our study shows that deposited Ge and Si dielectric thin-films can exhibit low microwave losses at near single-photon powers and sub-Kelvin temperatures (40 mK). This low…