activity
19971999
most citedGain Dependence of the Noise in the Single Electron Transistor

48 citations · 109 across the 9 of their papers we have counts for

collaborators

9 papers

cond-mat.mes-hall1999★ 1 cited

Charging effects in niobium nanostructures

Torsten Henning

Three types of metallic nanostructures comprising niobium were investigated experimentally; in all three types, electric transport at very low temperatures was governed by Coulomb…

cond-mat.mes-hall1998★ 7 cited

Bias and temperature dependence of the noise in a single electron transistor

Torsten Henning, B. Starmark, T. Claeson +1

A single electron transistor based on Al-AlO_x-Nb tunnel junctions was fabricated by shadow evaporation and in situ barrier formation. Its output current noise was measured, using…

cond-mat.mes-hall1998★ 48 cited

Gain Dependence of the Noise in the Single Electron Transistor

B. Starmark, Torsten Henning, A. N. Korotkov +2

An extensive investigation of low frequency noise in single electron transistors as a function of gain is presented. Comparing the output noise with gain for a large number of bias…

cond-mat.mes-hall1998★ 5 cited

Magneto-photoluminescence studies of Zn_{1-x}Mn_xTe/ZnTe multiple quantum-well and quantum dot structures

Ivan J. Griffin, Peter J. Klar, Daniel Wolverson +4

Wide quantum dots were fabricated from multiple quantum well structures based on Zn_{1-x}Mn_xTe/ZnTe (x = 0.076) dilute magnetic semiconductors and were investigated via photolumin…

cond-mat.mtrl-sci1998★ 15 cited

Photoluminescence and photoluminescence excitation studies of lateral size effects in Zn_{1-x}Mn_xSe/ZnSe quantum disc samples of different radii

P. J. Klar, D. Wolverson, J. J. Davies +3

Quantum disc structures (with diameters of 200 nm and 100 nm) were prepared from a Zn_{0.72}Mn_{0.28}Se/ZnSe single quantum well structure by electron beam lithography followed by…

cond-mat.mes-hall1997

Coulomb blockade effects in anodised niobium nanostructures

Torsten Henning

Niobium thin film nanostructures were fabricated using electron beam lithography and a liftoff process involving a four layer resist system. Wires having micrometres in length and…

cond-mat.mtrl-sci1997★ 14 cited

Comparison of Zn_{1-x}Mn_xTe/ZnTe multiple-quantum wells and quantum dots by below-bandgap photomodulated reflectivity

P. J. Klar, D. Wolverson, D. E. Ashenford +2

Large-area high density patterns of quantum dots with a diameter of 200 nm have been prepared from a series of four Zn_{0.93}Mn_{0.07}Te/ZnTe multiple quantum well structures of di…

cond-mat.supr-con1997★ 13 cited

Characterisation of HTSC ceramics from their resistive transition

Torsten Henning, H. Kliem, A. Weyers +1

The resistivity vs. temperature relation in bulk ceramic HTSC under self-field conditions as well as in weak external magnetic fields is modelled by local Lorentz force induced flu…

cond-mat.mes-hall1997★ 6 cited

Coulomb blockade effects in anodised niobium nanostructures

Torsten Henning, D. B. Haviland, P. Delsing

Niobium thin film wires were fabricated using electron beam lithography with a four layer liftoff mask system, and subsequently thinned by anodisation. The resistance along the wir…