15.5k citations · 70k across the 172 of their papers we have counts for
Showing 2011Show all
2 papers · 1 filter
cond-mat.mes-hall2011
High-frequency performance of graphene field effect transistors with saturating IV-characteristics
I. Meric, C. R. Dean, S. -J. Han +4
High-frequency performance of graphene field-effect transistors (GFETs) with boron-nitride gate dielectrics is investigated. Devices show saturating IV characteristics and fmax val…
cond-mat.mes-hall2011★ 77 cited
Graphene field-effect transistors based on boron nitride gate dielectrics
I. Meric, C. R. Dean, A. F. Young +3
Graphene field-effect transistors are fabricated utilizing single-crystal hexagonal boron nitride (h-BN), an insulating isomorph of graphene, as the gate dielectric. The devices ex…