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Pinpointing Lattice-Matched Conditions for Wurtzite ScxAl1-xN/GaN Heterostructures with X-Ray Reciprocal Space Analysis
Rajendra Kumar, Govardan Gopakumar, Zain Ul Abdin +2
Using comprehensive x-ray reciprocal space mapping, we establish the precise lattice-matching composition for wurtzite layers on (0001) GaN to be x = 0.14+/-0.01. 1…
Anodic Oxidation of Epitaxial Superconductor-Semiconductor Hybrids
Asbjørn C. C. Drachmann, Rosa E. Diaz, Candice Thomas +10
We demonstrate a new fabrication process for hybrid semiconductor-superconductor heterostructures based on anodic oxidation (AO), allowing controlled thinning of epitaxial Al films…
Toward durable Al-InSb hybrid heterostructures via epitaxy of 2ML interfacial InAs screening layers
Candice Thomas, Rosa E. Diaz, J. Houston Dycus +5
The large Landé g-factor, high spin-orbit coupling, and low effective mass of the two-dimensional electron gas in InSb quantum wells combined with proximal superconductivity may re…
Band bending profile and band offset extraction at semiconductor-metal interfaces
Sergej Schuwalow, Niels B. M. Schroeter, Jan Gukelberger +11
The band alignment of semiconductor-metal interfaces plays a vital role in modern electronics, but remains difficult to predict theoretically and measure experimentally. For interf…
Magnetically-defined topological edge plasmons in edgeless electron gas
Dafei Jin, Yang Xia, Thomas Christensen +11
Topological materials bear gapped excitations in bulk yet protected gapless excitations at boundaries. Magnetoplasmons (MPs), as high-frequency density excitations of two-dimension…
Mobility in excess of cm/Vs in InAs quantum wells grown on lattice mismatched InP substrates
A. T. Hatke, T. Wang, 2 C. Thomas +2
InAs-based two-dimensional electron systems grown on lattice mismatched InP substrates offer a robust platform for the pursuit of topologically protected quantum computing. We inve…