2 citations · 2 across the 1 of their papers we have counts for
3 papers
cond-mat.mes-hall2021★ 2 cited
Assessing the role of quantum effects in 2D heterophase MoTe field effect transistors
Line Jelver, Ole Hansen, Karsten Wedel Jacobsen
The two-dimensional transition metal dichalcogenides (TMDs) have been proposed as candidates for the channel material in future field effect transistor designs. The heterophase des…
cond-mat.mes-hall2019
Schottky barrier lowering due to interface states in 2D heterophase devices
Line Jelver, Daniele Stradi, Kurt Stokbro +1
The Schottky barrier of a metal-semiconductor junction is one of the key quantities affecting the charge transport in a transistor. The Schottky barrier height depends on several f…
cond-mat.mes-hall2018
Spontaneous breaking of time-reversal symmetry at the edges of 1T' monolayer transition metal dichalcogenides
Line Jelver, Daniele Stradi, Thomas Olsen +2
Using density functional theory calculations and the Greens's function formalism, we report the existence of magnetic edge states with a non-collinear spin texture present on diffe…