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20182023
most citedWhy In2O3 Can Make 0.7 nm Atomic Layer Thin Transistors?

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physics.comp-ph2023

Phase-field Simulations of Polarization Variations in Polycrystalline Hf0.5Zr0.5O2 based MFIM: Voltage-Dependence and Dynamics

Revanth Koduru, Imtiaz Ahmed, Atanu K Saha +3

In this work, we investigate the device-to-device variations in remanent polarization of Hafnium-Zirconium-Oxide based Metal-Ferroelectric-Insulator-Metal (MFIM) stacks. We conside…