223 citations · 348 across the 5 of their papers we have counts for
5 papers
Hydrogen-induced tunable remanent polarization in a perovskite nickelate
Yifan Yuan, Michele Kotiuga, Tae Joon Park +18
Materials with field-tunable polarization are of broad interest to condensed matter sciences and solid-state device technologies. Here, using hydrogen (H) donor doping, we modify t…
Phase-field Simulations of Polarization Variations in Polycrystalline Hf0.5Zr0.5O2 based MFIM: Voltage-Dependence and Dynamics
Revanth Koduru, Imtiaz Ahmed, Atanu K Saha +3
In this work, we investigate the device-to-device variations in remanent polarization of Hafnium-Zirconium-Oxide based Metal-Ferroelectric-Insulator-Metal (MFIM) stacks. We conside…
Why In2O3 Can Make 0.7 nm Atomic Layer Thin Transistors?
Mengwei Si, Yaoqiao Hu, Zehao Lin +7
In this work, we demonstrate enhancement-mode field-effect transistors by atomic-layer-deposited (ALD) amorphous In2O3 channel with thickness down to 0.7 nm. Thickness is found to…
Indium-Tin-Oxide Transistors with One Nanometer Thick Channel and Ferroelectric Gating
Mengwei Si, Joseph Andler, Xiao Lyu +4
In this work, we demonstrate high performance indium-tin-oxide (ITO) transistors with the channel thickness down to 1 nm and ferroelectric Hf0.5Zr0.5O2 as gate dielectric. On-curre…
On the Ferroelectric Polarization Switching of Hafnium Zirconium Oxide in Ferroelectric/Dielectric Stack
Mengwei Si, Xiao Lyu, Peide D. Ye
The ferroelectric polarization switching in ferroelectric hafnium zirconium oxide (Hf0.5Zr0.5O2, HZO) in the HZO/Al2O3 ferroelectric/dielectric stack is investigated systematically…