2 citations · 2 across the 8 of their papers we have counts for
8 papers
Epitaxial Growth of Ultra-smooth -NbN Thin Films on TiN-Buffered Sapphire by Room-Temperature Sputtering
Swagata Bhunia, Aakash Shandilya, Sounak Samanta +7
The phase of Niobium Nitride (NbN) is a promising superconducting material, which is chemically stable and shares lattice compatibility with conventional III-Nitride semiconduc…
Spectroscopic Signature of Local Alloy Fluctuations in InGaN/GaN Multi-Quantum-Disk Light Emitting Diode Heterostructures and Its Impact on the Optical Performance
Soumyadip Chatterjee, Subhranshu Sekhar Sahu, Kanchan Singh Rana +3
Inhomogeneity-governed carrier localization has been investigated in three sets of InGaN/GaN multi-quantum-disk light-emitting diode (LED) structures grown by plasma-assisted molec…
Unraveling the Origin of Mysterious Luminescence peak at 3.45 eV in GaN Nanowires
Swagata Bhunia, Soumyadip Chatterjee, Ritam Sarkar +3
The demand for GaN Nanowires (NWs)-based optoelectronic devices has rapidly increased over the past few years due to its superior crystalline quality compare to their planar counte…
Gate voltage modulation of the superconducting state in a degenerate semiconductor
Bikash C. Barik, Himadri Chakraborti, Buddhadeb Pal +6
In this work, we demonstrate that the modulation of carrier density can alter the superconducting transition temperature by up to mK in epitaxial Indium Nitride on Gallium Ni…
Ultrafast Green Single Photon Emission from an InGaN Quantum Dot-in-a-GaN Nanowire at Room Temperature
Swagata Bhunia, Ayan Majumder, Soumyadip Chatterjee +5
In recent years, there has been a growing demand for room-temperature visible single-photon emission from InGaN nanowire-quantum-dots (NWQDs) due to its potential in developing qua…
Investigation of Magnesium Silicate as an Effective Gate Dielectric for AlGaN/GaN Metal Oxide High Electron Mobility Transistors (MOSHEMT)
Seshasainadh Pudi, Navneet Bhardwaj, Ritam Sarkar +6
In this study, a 6 nm layer of Magnesium Silicate (Mg-Silicate) was deposited on AlGaN/GaN heterostructure by sputtering of multiple stacks of MgO and SiO, followed by rapid…
Scaling nanowire-supported GaN quantum dots to the sub-10-nm limit, yielding complete suppression of the giant built-in potential
Swagata Bhunia, Ritam Sarkar, Dhiman Nag +3
The nanowire-supported quantum dot (NWQD) of GaN is an unconventional nanostructure, which is extremely promising for realization of UV photonics in general, and room-temperature s…
Engineering decomposition-resilience and de-coalescence of GaN nanowire ensembles
Swagata Bhunia, Ritam Sarkar, Dhiman Nag +4
The rapidly increasing interest in nanowires (NWs) of GaN and associated III-Nitrides for (opto-)electronic applications demands immediate addressal of the technological challenges…