Enhanced cavity coupling to silicon monovacancies in 4-H Silicon Carbide using below bandgap laser irradiation and low temperature thermal annealing

Mena N. Gadalla, Andrew S. Greenspon, Rodrick Kuate Defo +2

The negatively charged silicon monovacancy $V_{Si}^{-}$ in 4H-silicon carbide (SiC) is a spin-active point defect that has the potential to act as a qubit or quantum memory in solid-…