Stress distribution at the AlN/SiC heterointerface probed by Raman spectroscopy

I. D. Breev, K. V. Likhachev, V. V. Yakovleva +5

We grow AlN/4H-SiC and AlN/6H-SiC heterostructures by physical vapor deposition and characterize the heterointerface with nanoscale resolution. Furthermore, we investigate the spat…