121 citations · 269 across the 9 of their papers we have counts for
16 papers
Mid- and far-infrared localized surface plasmon resonances in chalcogen-hyperdoped silicon
Mao Wang, Ye Yu, Slawomir Prucnal +13
Plasmonic sensing in the infrared region employs the direct interaction of the vibrational fingerprints of molecules with the plasmonic resonances, creating surface-enhanced sensin…
Chlorine doping of MoSe2 flakes by ion implantation
Slawomir Prucnal, Arsalan Hashemi, Mahdi Ghorbani-Asl +10
The efficient integration of transition metal dichalcogenides (TMDs) into the current electronic device technology requires mastering the techniques of effective tuning of their op…
Stress-controlled zero-field spin splitting in silicon carbide
I. D. Breev, A. V. Poshakinskiy, V. V. Yakovleva +6
We report the influence of static mechanical deformation on the zero-field splitting of silicon vacancies in silicon carbide at room temperature. We use AlN/6H-SiC heterostructures…
Silicon-based Intermediate-band Infrared Photodetector realized by Te Hyperdoping
Mao Wang, Eric García-Hemme, Yonder Berencén +7
Si-based photodetectors satisfy the criteria of low-cost and environmental-friendly, and can enable the development of on-chip complementary metal-oxide-semiconductor (CMOS)-compat…
Local and nonlocal spin Seebeck effect in lateral Pt--Pt devices at low temperatures
Prasanta Muduli, Richard Schlitz, Tobias Kosub +4
We have studied thermally driven magnon spin transport (spin Seebeck effect, SSE) in heterostructures of antiferromagnetic - and Pt at low temperatures. Monito…
Dissolution of donor-vacancy clusters in heavily doped n-type germanium
Slawomir Prucnal, Maciej O. Liedke, Xiaoshuang Wang +17
The n-type doping of Ge is a self-limiting process due to the formation of vacancy-donor complexes (DnV with n <= 4) that deactivate the donors. This work unambiguously demonstrate…