121 citations · 402 across the 15 of their papers we have counts for
17 papers
Effect of Near-surface Thermal Spikes on Radiation Hardness of Gallium Oxide
Tomás Fernández Bouvier, Umutcan Bektas, Alexander Azarov +10
Gallium oxide (GaO) stands out as an extraordinary high radiation-tolerant semiconductor, because its lattice displacements induce polymorph transitions, holding materi…
Mid- and far-infrared localized surface plasmon resonances in chalcogen-hyperdoped silicon
Mao Wang, Ye Yu, Slawomir Prucnal +13
Plasmonic sensing in the infrared region employs the direct interaction of the vibrational fingerprints of molecules with the plasmonic resonances, creating surface-enhanced sensin…
Chlorine doping of MoSe2 flakes by ion implantation
Slawomir Prucnal, Arsalan Hashemi, Mahdi Ghorbani-Asl +10
The efficient integration of transition metal dichalcogenides (TMDs) into the current electronic device technology requires mastering the techniques of effective tuning of their op…
Stress-controlled zero-field spin splitting in silicon carbide
I. D. Breev, A. V. Poshakinskiy, V. V. Yakovleva +6
We report the influence of static mechanical deformation on the zero-field splitting of silicon vacancies in silicon carbide at room temperature. We use AlN/6H-SiC heterostructures…
Silicon-based Intermediate-band Infrared Photodetector realized by Te Hyperdoping
Mao Wang, Eric García-Hemme, Yonder Berencén +7
Si-based photodetectors satisfy the criteria of low-cost and environmental-friendly, and can enable the development of on-chip complementary metal-oxide-semiconductor (CMOS)-compat…
Local and nonlocal spin Seebeck effect in lateral Pt--Pt devices at low temperatures
Prasanta Muduli, Richard Schlitz, Tobias Kosub +4
We have studied thermally driven magnon spin transport (spin Seebeck effect, SSE) in heterostructures of antiferromagnetic - and Pt at low temperatures. Monito…
Dissolution of donor-vacancy clusters in heavily doped n-type germanium
Slawomir Prucnal, Maciej O. Liedke, Xiaoshuang Wang +17
The n-type doping of Ge is a self-limiting process due to the formation of vacancy-donor complexes (DnV with n <= 4) that deactivate the donors. This work unambiguously demonstrate…
Low damping and microstructural perfection of sub-40nm-thin yttrium iron garnet films grown by liquid phase epitaxy
Carsten Dubs, Oleksii Surzhenko, Ronny Thomas +6
The field of magnon spintronics is experiencing an increasing interest in the development of solutions for spin-wave-based data transport and processing technologies that are compl…
Site-controlled formation of single Si nanocrystals in a buried SiO2 matrix using ion beam mixing
Xiaomo Xu, Thomas Prüfer, Daniel Wolf +8
For future nanoelectronic devices - such as room-temperature single electron transistors - the site-controlled formation of single Si nanocrystals (NCs) is a crucial prerequisite.…
p-type codoping effect in (Ga,Mn)As: Mn lattice location versus magnetic properties
Chi Xu, Chenhui Zhang, Mao Wang +7
In the present work, we perform a systematic investigation on p-type codoping in (Ga,Mn)As. Through gradually increasing Zn doping concentration, the hole concentration increases,…
Vertical Organic Thin-Film Transistor with Anodized Permeable Base for Very Low Leakage Current
Felix Dollinger, Kyung-Geun Lim, Yang Li +6
The Organic Permeable Base Transistor (OPBT) is currently the fastest organic transistor with a transition frequency of 40 MHz. It relies on a thin aluminum base electrode to contr…
Epitaxial Mn5Ge3 (100) layer on Ge(100) substrates obtained by flash lamp annealing
Yufang Xie, Ye Yuan, Mao Wang +7
Mn5Ge3 thin films have been demonstrated as a promising spin-injector material for germanium-based spintronic devices. So far, Mn5Ge3 has been grown epitaxially only on Ge (111) su…
Three-dimensional composition and electric potential mapping of III-V core-multishell nanowires by correlative STEM and holographic tomography
Daniel Wolf, René Hübner, Tore Niermann +5
The non-destructive characterization of nanoscale devices, such as those based on semiconductor nanowires, in terms of functional potentials is crucial for correlating device prope…
Structure-property relationship of CoMnSi thin films in response to He -irradiation
F. Hammerath, R. Bali, R. Huebner +7
We investigated the structure-property relationship of CoMnSi Heusler thin films upon the irradiation with He ions. The variation of the crystal structure with increasing i…
Nanomagnetism of magnetoelectric granular thin-film antiferromagnets
Patrick Appel, Brendan J. Shields, Tobias Kosub +4
Antiferromagnets have recently emerged as attractive platforms for spintronics applications, offering fundamentally new functionalities compared to their ferromagnetic counterparts…
CMOS-compatible controlled hyperdoping of silicon nanowires
Yonder Berencén, Slawomir Prucnal, Wolfhard Möller +13
Hyperdoping consists of the intentional introduction of deep-level dopants into a semiconductor in excess of equilibrium concentrations. This causes a broadening of dopant energy l…
Electronic phase separation in insulating (Ga,Mn)As with low compensation: Super-paramagnetism and hopping conduction
Ye Yuan, Mao Wang, Chi Xu +6
In the present work, low compensated insulating (Ga,Mn)As with 0.7% Mn is obtained by ion implantation combined with pulsed laser melting. The sample shows variable-range hopping t…