121 citations · 269 across the 9 of their papers we have counts for
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Mid- and far-infrared localized surface plasmon resonances in chalcogen-hyperdoped silicon
Mao Wang, Ye Yu, Slawomir Prucnal +13
Plasmonic sensing in the infrared region employs the direct interaction of the vibrational fingerprints of molecules with the plasmonic resonances, creating surface-enhanced sensin…
Chlorine doping of MoSe2 flakes by ion implantation
Slawomir Prucnal, Arsalan Hashemi, Mahdi Ghorbani-Asl +10
The efficient integration of transition metal dichalcogenides (TMDs) into the current electronic device technology requires mastering the techniques of effective tuning of their op…
Stress-controlled zero-field spin splitting in silicon carbide
I. D. Breev, A. V. Poshakinskiy, V. V. Yakovleva +6
We report the influence of static mechanical deformation on the zero-field splitting of silicon vacancies in silicon carbide at room temperature. We use AlN/6H-SiC heterostructures…
Dissolution of donor-vacancy clusters in heavily doped n-type germanium
Slawomir Prucnal, Maciej O. Liedke, Xiaoshuang Wang +17
The n-type doping of Ge is a self-limiting process due to the formation of vacancy-donor complexes (DnV with n <= 4) that deactivate the donors. This work unambiguously demonstrate…
Low damping and microstructural perfection of sub-40nm-thin yttrium iron garnet films grown by liquid phase epitaxy
Carsten Dubs, Oleksii Surzhenko, Ronny Thomas +6
The field of magnon spintronics is experiencing an increasing interest in the development of solutions for spin-wave-based data transport and processing technologies that are compl…
p-type codoping effect in (Ga,Mn)As: Mn lattice location versus magnetic properties
Chi Xu, Chenhui Zhang, Mao Wang +7
In the present work, we perform a systematic investigation on p-type codoping in (Ga,Mn)As. Through gradually increasing Zn doping concentration, the hole concentration increases,…