activity
20172025
most citedProbing single electrons across 300 mm spin qubit wafers

142 citations · 230 across the 8 of their papers we have counts for

collaborators
Showing cond-mat.mes-hallShow all

5 papers · 1 filter

cond-mat.mes-hall2025

Fast high-fidelity baseband reset of a latched state for quantum dot qubit readout

Piotr Marciniec, M. A. Wolfe, Tyler Kovach +9

A common method for reading out the state of a spin qubit is by latching one logical qubit state, either or , onto a different, metastable charge state. Such…

cond-mat.mes-hall2025★ 5 cited

Valley Splitting Correlations Across a Silicon Quantum Well Containing Germanium

Jonathan C. Marcks, Emily Eagen, Emma C. Brann +12

Quantum dots in SiGe/Si/SiGe heterostructures host coherent electron spin qubits, which are promising for future quantum computers. The silicon quantum well hosts near-degenerate e…

cond-mat.mes-hall2024★ 54 cited

12-spin-qubit arrays fabricated on a 300 mm semiconductor manufacturing line

Hubert C. George, Mateusz T. Mądzik, Eric M. Henry +29

Intels efforts to build a practical quantum computer are focused on developing a scalable spin-qubit platform leveraging industrial high-volume semiconductor manufacturing expertis…

cond-mat.mes-hall2019★ 2 cited

Single-Shot Readout Performance of Two Heterojunction-Bipolar-Transistor Amplification Circuits at Millikelvin Temperatures

M. J. Curry, M. Rudolph, T. D. England +12

High-fidelity single-shot readout of spin qubits requires distinguishing states much faster than the T1 time of the spin state. One approach to improving readout fidelity and bandw…

cond-mat.mes-hall2017★ 22 cited

Quantum dots with split enhancement gate tunnel barrier control

S. Rochette, M. Rudolph, A. -M. Roy +10

We introduce a silicon metal-oxide-semiconductor quantum dot architecture based on a single polysilicon gate stack. The elementary structure consists of two enhancement gates separ…